The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 05, 2019

Filed:

Aug. 15, 2016
Applicant:

Abb Schweiz Ag, Baden, CH;

Inventors:

Samuel Hartmann, Staufen, CH;

Didier Cottet, Zürich, CH;

Slavo Kicin, Zürich, CH;

Assignee:

ABB Schweiz AG, Baden, CH;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/739 (2006.01); H01L 23/64 (2006.01); H01L 25/07 (2006.01); H03K 17/12 (2006.01); H01L 23/02 (2006.01); H01L 23/00 (2006.01); H01L 27/088 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H03K 17/081 (2006.01); H03K 17/082 (2006.01); H03K 17/0424 (2006.01); H02M 1/088 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7393 (2013.01); H01L 23/02 (2013.01); H01L 23/645 (2013.01); H01L 24/48 (2013.01); H01L 25/072 (2013.01); H01L 27/088 (2013.01); H01L 29/41708 (2013.01); H01L 29/4232 (2013.01); H03K 17/08116 (2013.01); H03K 17/127 (2013.01); H01L 2224/4813 (2013.01); H01L 2924/0002 (2013.01); H01L 2924/13055 (2013.01); H02M 1/088 (2013.01); H03K 17/0424 (2013.01); H03K 17/0828 (2013.01);
Abstract

A semiconductor module comprises a semiconductor chip comprising a semiconductor switch having a collector, emitter and gate, a collector terminal connected to the collector, gate terminal connected to the gate, an emitter terminal connected to the emitter via an emitter conductor path having an emitter inductance, an auxiliary emitter terminal connected to the emitter, a first conductor path connected to the emitter, and a second conductor path connected to the emitter having a different mutually inductive coupling with the emitter conductor path as the first conductor path. The first conductor path and the second conductor path are connectable to the auxiliary emitter terminal and/or the first conductor path is connected to the auxiliary emitter terminal and the second conductor path is connected to a second auxiliary emitter terminal. The semiconductor switch is an IGBT and each of the first conductor path and the second conductor path comprises bridging points for connecting the respective conductor path to the auxiliary emitter terminal.


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