The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2019
Filed:
Jan. 30, 2012
Joseph A. Payne, Elkridge, MD (US);
Wayne S. Miller, Hanover, MD (US);
Monica P. Lilly, Frederick, MD (US);
Silai V. Krishnaswamy, Monroeville, PA (US);
Joseph A. Payne, Elkridge, MD (US);
Wayne S. Miller, Hanover, MD (US);
Monica P. Lilly, Frederick, MD (US);
Silai V. Krishnaswamy, Monroeville, PA (US);
Northrop Grumman Systems Corporation, Falls Church, VA (US);
Abstract
A radio-frequency (RF) carbon-nanotube (CNT) field effect transistor (FET) device. The device includes a source contact, a drain contact, semi-conducting CNTs positioned between the source and drain contacts, high-κ gate dielectric, and a local backgate positioned below the semi-conducting CNTs, in which the local backgate is capable of RF performance and is capable of being used in a backgate burnout process used to enhance the semiconducting to metallic tube ratio of the device.