The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2019
Filed:
Jul. 11, 2016
The United States of America As Represented BY the Director, National Security Agency, Washington, DC (US);
Peter A. DiFonzo, New Windsor, MD (US);
The United States of America as represented by the Director, National Security Agency, Washington, DC (US);
Abstract
A method of fabricating a semiconductor capacitor is disclosed. The method includes forming a first trench in a semiconductor substrate, forming a dielectric lining layer in the first trench, and depositing a first capacitor conductor plate layer on the dielectric lining layer. The method also includes forming a second trench such that the dielectric lining layer is exposed. The method also includes forming a third trench such that the dielectric lining layer is exposed within the third trench. The method also includes depositing a second capacitor conductor plate layer in the second trench and depositing a third capacitor conductor plate layer in the third trench. The method also includes forming a first electrical contact between the first capacitor conductor plate layer and the second capacitor conductor plate layer and forming a second electrical contact between the first capacitor conductor plate layer and the third capacitor conductor plate layer.