The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 05, 2019

Filed:

Sep. 06, 2017
Applicant:

Toshiba Memory Corporation, Minato-ku, Tokyo, JP;

Inventors:

Kana Hirayama, Yokkaichi Mie, JP;

Kazuhiko Yamamoto, Yokkaichi Mie, JP;

Yusuke Arayashiki, Yokkaichi Mie, JP;

Yosuke Murakami, Yokkaichi Mie, JP;

Yusuke Kobayashi, Kuwana Mie, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 45/00 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/249 (2013.01); G11C 13/0007 (2013.01); G11C 13/0069 (2013.01); G11C 13/0097 (2013.01); H01L 45/08 (2013.01); H01L 45/1226 (2013.01); H01L 45/1246 (2013.01); H01L 45/1253 (2013.01); H01L 45/146 (2013.01); G11C 2213/32 (2013.01); G11C 2213/51 (2013.01); G11C 2213/52 (2013.01); G11C 2213/71 (2013.01); H01L 27/2436 (2013.01);
Abstract

According to one or more embodiments, a memory device includes a first interconnection extending in a first direction, a plurality of second interconnections extending in a second direction intersecting the first direction, and a first resistance change film provided between the first interconnection and the second interconnections. The first resistance change film includes a first conductive layer having a first conductivity, and a second conductive layer provided between the first conductive layer and the plurality of second interconnections and having a second conductivity higher than the first conductivity.


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