The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2019
Filed:
Feb. 01, 2017
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Zhe Wu, Suwon-si, KR;
Dong-ho Ahn, Hwaseong-si, KR;
Hideki Horii, Seoul, KR;
Soon-oh Park, Suwon-si, KR;
Jeong-hee Park, Hwaseong-si, KR;
Jin-woo Lee, Seoul, KR;
Dong-jun Seong, Seongnam-si, KR;
Seol Choi, Seoul, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2481 (2013.01); H01L 45/06 (2013.01); H01L 45/126 (2013.01); H01L 45/1233 (2013.01); H01L 45/143 (2013.01); H01L 45/144 (2013.01); H01L 45/1675 (2013.01);
Abstract
A memory device includes a variable resistance layer and a selection device layer electrically connected to the variable resistance layer. The memory device further included a chalcogenide switching material that reduces leakage current and has, for example, a composition according to chemical formula 1 below,[GeSi(AsTe)][N]  (1)