The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 05, 2019

Filed:

Jun. 26, 2017
Applicant:

Sony Corporation, Tokyo, JP;

Inventor:

Shinya Yamakawa, Kanagawa, JP;

Assignee:

SONY CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 31/06 (2012.01); H01L 31/0232 (2014.01);
U.S. Cl.
CPC ...
H01L 27/14643 (2013.01); H01L 27/1461 (2013.01); H01L 27/1463 (2013.01); H01L 27/14603 (2013.01); H01L 27/14612 (2013.01); H01L 27/14634 (2013.01); H01L 27/14636 (2013.01); H01L 27/14641 (2013.01); H01L 27/14689 (2013.01); H01L 31/02327 (2013.01); H01L 31/06 (2013.01);
Abstract

A solid-state image pickup element including: a photoelectric conversion region; a transistor; an isolation region of a first conductivity type configured to isolate the photoelectric conversion region and the transistor from each other; a well region of the first conductivity type having the photoelectric conversion region, the transistor, and the isolation region of the first conductivity type formed therein; a contact portion configured to supply an electric potential used to fix the well region to a given electric potential; and an impurity region of the first conductivity type formed so as to extend in a depth direction from a surface of the isolation region of the first conductivity type in the isolation region of the first conductivity type between the contact portion and the photoelectric conversion region, and having a sufficiently higher impurity concentration than that of the isolation region of the first conductivity type.


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