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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10224353 B1

PDFFull Text
Date of Patent:
Mar. 05, 2019

Filed:

Jan. 10, 2017

Manufacturing method for an array substrate

Applicants:

Boe Technology Group Co., Ltd., Beijing, CN;

Ka Imaging Inc., Kitchener, Ontario, CA;

Inventor:

Chia Chiang Lin, Beijing, CN;

Assignees:

BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;

KA IMAGING INC., Kitchener, Ontario, CA;

Attorney:

Ladas & Parry LLP

Primary Examiner:

Nikolay Yushin

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/144 (2006.01); H01L 27/12 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/768 (2006.01); H01L 23/31 (2006.01); H01L 29/45 (2006.01); H01L 29/49 (2006.01); H01L 29/786 (2006.01); H01L 31/0224 (2006.01); H01L 31/18 (2006.01); H01L 31/20 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1443 (2013.01); H01L 21/31111 (2013.01); H01L 21/32134 (2013.01); H01L 21/76802 (2013.01); H01L 23/3171 (2013.01); H01L 27/12 (2013.01); H01L 27/124 (2013.01); H01L 27/1248 (2013.01); H01L 27/1262 (2013.01); H01L 29/45 (2013.01); H01L 29/4908 (2013.01); H01L 29/78633 (2013.01); H01L 31/022475 (2013.01); H01L 31/022483 (2013.01); H01L 31/1884 (2013.01); H01L 31/202 (2013.01); H01L 21/0273 (2013.01);
Abstract

Disclosed are an array substrate, a manufacturing method thereof, a sensor and a detection device. The array substrate includes: a base substrate; a thin-film transistor (TFT) being disposed on the base substrate and including a source electrode and an active layer; a passivation layer disposed on the TFT; a first metal layer disposed on the passivation layer; an insulating layer disposed on the first metal layer; a through hole structure running through the insulating layer, the first metal layer and the passivation layer; and a detection unit being disposed on the insulating layer and including a second metal layer, wherein the second metal layer makes direct contact with the source electrode via the through hole structure.

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