The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2019
Filed:
Jan. 16, 2017
Applicant:
Shenzhen China Star Optoelectronics Technology Co., Ltd., Shenzhen, Guangdong, CN;
Inventors:
Jianjian Ying, Guangdong, CN;
Peng Du, Guangdong, CN;
Assignee:
SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD., Shenzhen, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 49/02 (2006.01); G02F 1/1368 (2006.01); G02F 1/1343 (2006.01); G02F 1/1333 (2006.01); G02F 1/1362 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1255 (2013.01); G02F 1/1368 (2013.01); G02F 1/13439 (2013.01); G02F 1/133345 (2013.01); G02F 1/134309 (2013.01); G02F 1/136213 (2013.01); G02F 1/136227 (2013.01); H01L 27/124 (2013.01); H01L 28/60 (2013.01); G02F 2001/134318 (2013.01); G02F 2001/136222 (2013.01); G02F 2201/124 (2013.01);
Abstract
Disclosed are a pixel unit structure and a display device. The pixel unit structure includes a thin film transistor formed on a substrate, and a first insulating layer, a first transparent electrode layer, a second insulating layer, and a second transparent electrode layer formed in sequence from bottom to top above the thin film transistor. A storage capacitor is formed between the first transparent electrode layer and the second transparent electrode layer.