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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10224322 B1

PDFFull Text
Date of Patent:
Mar. 05, 2019

Filed:

Jul. 22, 2016

Semiconductor device

Applicant:

Denso Corporation, Kariya, Aichi-pref., JP;

Inventors:

Weitao Cheng, Kariya, JP;

Shigeki Takahashi, Kariya, JP;

Masakiyo Sumitomo, Kariya, JP;

Assignee:

DENSO CORPORATION, Kariya, JP;

Attorney:

Posz Law Group, PLC

Primary Examiner:

Frederick B Hargrove

Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 21/8234 (2006.01); H01L 29/739 (2006.01); H01L 27/04 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01); H01L 29/861 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0664 (2013.01); H01L 21/8234 (2013.01); H01L 27/04 (2013.01); H01L 27/06 (2013.01); H01L 27/088 (2013.01); H01L 29/0657 (2013.01); H01L 29/0696 (2013.01); H01L 29/1095 (2013.01); H01L 29/407 (2013.01); H01L 29/4236 (2013.01); H01L 29/739 (2013.01); H01L 29/7397 (2013.01); H01L 29/8613 (2013.01);
Abstract

A semiconductor device includes a diode provided with: a drift layer being a first conductivity type; a cathode region being provided in a back face side of the drift layer and being the first conductivity type; a second conductivity type region provided in a surface layer part of the drift layer; multiple trenches dividing the second conductivity type region into pieces by being provided deeper than the second conductivity type region, and configuring an anode region; a gate insulation film provided in a surface of the trench; a gate electrode provided in a surface of the gate insulation film; an upper electrode electrically connected with the anode region; and a lower electrode electrically connected with the cathode region. A width between the trenches is narrowest in the drift layer is defined as a mesa width. The mesa width is set to be equal to or greater than 0.3 μm.

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