The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 05, 2019

Filed:

Jul. 16, 2013
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Shintaro Araki, Tokyo, JP;

Mitsunori Aiko, Tokyo, JP;

Takaaki Shirasawa, Tokyo, JP;

Khalid Hassan Hussein, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/495 (2006.01); H01L 23/31 (2006.01); H01L 25/07 (2006.01); H01L 25/18 (2006.01); H02M 7/00 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49568 (2013.01); H01L 23/3114 (2013.01); H01L 23/49537 (2013.01); H01L 23/49562 (2013.01); H01L 24/36 (2013.01); H01L 24/40 (2013.01); H01L 25/07 (2013.01); H01L 25/18 (2013.01); H02M 7/003 (2013.01); H01L 2224/40137 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/181 (2013.01);
Abstract

A first switching element and a second switching element are thermally connected to each other since the first switching element and the second switching element are fixed on a second substrate. An upper arm is capable of increasing the current capacity of the semiconductor device because of the parallel connection of the first switching element and the second switching element. The lower arm is capable of increasing the current capacity of the semiconductor device because of the parallel connection of the first switching element and the second switching element.


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