The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2019
Filed:
Jul. 22, 2016
Applicant:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Inventors:
Keiichiro Matsuo, Yokohama, JP;
Yusaku Asano, Yokohama, JP;
Assignee:
KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/306 (2006.01); H01L 21/67 (2006.01); H01L 21/78 (2006.01); C23F 1/20 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30604 (2013.01); C23F 1/20 (2013.01); H01L 21/30608 (2013.01); H01L 21/32133 (2013.01); H01L 21/67075 (2013.01); H01L 21/78 (2013.01);
Abstract
An etching method according to an embodiment includes supplying an etchant containing hydrofluoric acid, an oxidizer, and a buffer to a semiconductor substrate including a first region covered with a metal layer made of one or more metals other than noble metals, and a second region covered with a catalyst layer made of a noble metal, such that the etchant comes in contact with the catalyst layer and the metal layer, thereby etching the semiconductor substrate at a position of the catalyst layer.