The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2019
Filed:
Aug. 11, 2017
Mitsubishi Chemical Corporation, Tokyo, JP;
MITSUBISHI CHEMICAL CORPORATION, Tokyo, JP;
Abstract
Provides is a C-plane GaN substrate which, although formed from a GaN crystal grown so that surface pits are generated, is free from any inversion domain, and moreover, has a low spiral dislocation density in a gallium polar surface. Provides is a C-plane GaN substrate wherein: the substrate comprises a plurality of facet growth areas each having a closed ring outline-shape on a gallium polar surface; the spiral dislocation density is less than 1×10cmanywhere on the gallium polar surface; and the substrate is free from any inversion domain. The C-plane GaN substrate may comprise a high dislocation density part having a dislocation density of more than 1×10cmand a low dislocation density part having a dislocation density of less than 1×10cmon the gallium polar surface.