The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 05, 2019

Filed:

Nov. 17, 2017
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;

Inventors:

Dae-Shik Kim, Hwaseong-si, KR;

Suk-Soo Pyo, Hwasung-si, KR;

Gwan-Hyeob Koh, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/04 (2006.01); G11C 11/16 (2006.01); H01L 27/22 (2006.01); H01L 43/10 (2006.01); H01L 43/08 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1673 (2013.01); G11C 11/161 (2013.01); H01L 27/228 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01);
Abstract

A memory device includes at least one reference cell and multiple memory cells. A method of operating the memory device may include detecting a temperature of the memory device and controlling a level of a first read signal applied to the at least one reference cell in accordance with a result of the detecting of the temperature. The method may also include comparing a first sensing value sensed by applying the first read signal to the at least one reference cell with a second sensing value sensed by applying a second read signal to a selected memory cell among the multiple memory cells.


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