The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 05, 2019

Filed:

Jul. 26, 2016
Applicant:

Stmicroelectronics S.r.l., Agrate Brianza, IT;

Inventors:

Giuseppe Barillaro, Pisa, IT;

Alessandro Diligenti, Leghorn, IT;

Caterina Riva, Cusago, IT;

Roberto Campedelli, Novate Milanese, IT;

Stefano Losa, Cornaredo, IT;

Assignee:

STMICROELECTRONICS S.R.L., Agrate Brianza, IT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B81C 1/00 (2006.01); H01L 27/10 (2006.01);
U.S. Cl.
CPC ...
B81C 1/00539 (2013.01); B81C 1/00595 (2013.01); H01L 27/10 (2013.01); B81B 2201/038 (2013.01); B81B 2201/07 (2013.01); B81B 2201/12 (2013.01); B81B 2203/019 (2013.01); B81B 2203/0118 (2013.01); B81C 2201/0136 (2013.01); B81C 2203/0714 (2013.01);
Abstract

A process for manufacturing an interaction system of a microelectromechanical type for a storage medium, the interaction system provided with a supporting element and an interaction element carried by the supporting element, envisages the steps of: providing a wafer of semiconductor material having a substrate with a first type of conductivity and a top surface; forming a first interaction region having a second type of conductivity, opposite to the first type of conductivity, in a surface portion of the substrate in the proximity of the top surface; and carrying out an electrochemical etch of the substrate starting from the top surface, the etching being selective with respect to the second type of conductivity, so as to remove the surface portion of the substrate and separate the first interaction region from the substrate, thus forming the supporting element.


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