The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2019
Filed:
Jan. 03, 2018
Efficient Power Conversion Corporation, El Segundo, CA (US);
John S. Glaser, Niskayuna, NY (US);
David C. Reusch, Blacksburg, VA (US);
Michael A. de Rooij, Playa Vista, CA (US);
Efficient Power Conversion Corporation, El Segundo, CA (US);
Abstract
A circuit for an RF switch using FET transistors that largely cancels the non-linearity of the Cof the FETs over a majority of the signal range, and reduces distortion. The RF switch includes two substantially identical FETs. The source of one FET is connected to the drain of the other FET and the node formed comprises one terminal of the switch. Two substantially identical capacitors are connected in series with each other and in parallel with the FETs, and the node thus formed comprises the second terminal of the switch. The capacitors are selected such that they have negligible impedance at AC frequencies for which the switch is expected be used, and in particular a much lower impedance than Cof each FET. A voltage source with a series impedance is also connected in parallel with the capacitors and the two FETs.