The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2019
Filed:
Dec. 28, 2017
Mitsubishi Electric Corporation, Tokyo, JP;
Shinji Sakai, Tokyo, JP;
Hisashi Oda, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A high-side gate drive circuit includes pulse generating circuits that generate a first pulse synchronized with an input signal, and level shift circuits that shift a level of a reference voltage for the first pulse to a power supply voltage of a high-side switching element. The level shift circuits include MOSFETs to be driven by the first pulse. The high-side gate drive circuit includes a mask signal generating circuit that generates a mask signal that becomes a high level in a period in which source potential of the MOSFETs becomes a high level, and reshot circuits that input, when the first pulse is input into the level shift circuits during a mask period that is a period in which the mask signal is a high level, a second pulse into the level shift circuits after the mask period.