The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 26, 2019

Filed:

May. 24, 2016
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Nam Goo Cha, Hwaseong-si, KR;

Wan Tae Lim, Suwon-si, KR;

Yong Il Kim, Seoul, KR;

Hye Seok Noh, Suwon-si, KR;

Eun Joo Shin, Seoul, KR;

Sung Hyun Sim, Uiwang-si, KR;

Hanul Yoo, Goyang-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/49 (2006.01); H01L 33/58 (2010.01); H01L 33/50 (2010.01); H01L 33/44 (2010.01); H01L 33/00 (2010.01); F21Y 103/10 (2016.01); F21Y 115/10 (2016.01); F21S 8/02 (2006.01); F21V 23/00 (2015.01); F21K 9/275 (2016.01); F21K 9/237 (2016.01);
U.S. Cl.
CPC ...
H01L 33/58 (2013.01); H01L 33/505 (2013.01); F21K 9/237 (2016.08); F21K 9/275 (2016.08); F21S 8/026 (2013.01); F21V 23/005 (2013.01); F21Y 2103/10 (2016.08); F21Y 2115/10 (2016.08); H01L 33/0079 (2013.01); H01L 33/44 (2013.01); H01L 2224/11 (2013.01);
Abstract

A semiconductor light emitting device includes: a light emitting structure including a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer respectively providing a first surface and a second surface, opposite to each other, of the light emitting structure, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, a region of the first conductivity-type semiconductor layer being open toward the second surface, and the first surface having a concavo-convex portion disposed thereon; a first electrode and a second electrode disposed on the region of the first conductivity-type semiconductor layer and a region of the second conductivity-type semiconductor layer, respectively; a transparent support substrate disposed on the first surface of the light emitting structure; and a transparent adhesive layer disposed between the first surface of the light emitting structure and the transparent support substrate.


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