The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 26, 2019

Filed:

Nov. 25, 2015
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Andreas Rudolph, Regensburg, DE;

Petrus Sundgren, Lappersdorf, DE;

Ivar Tangring, Regensburg, DE;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/06 (2010.01); H01L 33/08 (2010.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); H01L 33/08 (2013.01);
Abstract

An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a p-type semiconductor region, an n-type semiconductor region, and an active layer arranged between the p-type semiconductor region and the n-type semiconductor region. The active layer is designed as a multiple quantum well structure, wherein the multiple quantum well structure has a first region of alternating first quantum well layers and first barrier layers and a second region having at least one second quantum well layer and at least one second barrier layer. The at least one second quantum well layer has an electronic band gap (E) that is less than the electronic band gap (E) of the first quantum well layers, and the at least one second barrier layer has an electronic band gap (E) that is greater than the electronic band gap (E) of the first barrier layers.


Find Patent Forward Citations

Loading…