The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2019
Filed:
Apr. 09, 2018
Globalfoundries Inc., Grand Cayman, KY;
Qizhi Liu, Lexington, MA (US);
Vibhor Jain, Essex Junction, VT (US);
James W. Adkisson, Jericho, VT (US);
James R. Elliott, Huntington, VT (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
Device structures and fabrication methods for heterojunction bipolar transistors. A trench isolation region surrounds an active region that includes a collector, and a base layer includes a first section composed of a single-crystal semiconductor material that is arranged over the active region and a second section composed of polycrystalline semiconductor material that is arranged over the trench isolation region. A first semiconductor layer of the second section of the base layer is removed selective to a second semiconductor layer of the second section of the base layer to define a gap arranged in a vertical direction between the second semiconductor layer of the second section of the base layer and the trench isolation region. An emitter is formed on the first section of the base layer.