The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2019
Filed:
Nov. 20, 2016
Tower Semiconductor Ltd., Migdal Haemek, IL;
Johnatan A. Kantarovsky, Zicron Ya'akov, IL;
Sharon Levin, Haifa, IL;
David Mistele, Haifa, IL;
Sagy Levy, Zicron Ya'akov, IL;
TOWER SEMICONDUCTOR LTD., Migdal Haemek, IL;
Abstract
Some demonstrative embodiments include a Metal-Oxide-Semiconductor (MOS) transistor including a multi-split gate. For example, an Integrated Circuit (IC) may include at least one MOS transistor, the MOS transistor may include a source; a drain; a body; and a multi-split gate including a control gate component configured to control conductivity of the MOS transistor, and at least first and second field plate gate components, the first field plate gate component is electrically isolated from the second field plate gate component, the first and second field plate gate components are electrically isolated from the control gate.