The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2019
Filed:
Nov. 09, 2016
Applicant:
Microchip Technology Incorporated, Chandler, AZ (US);
Inventors:
Assignee:
MICROCHIP TECHNOLOGY INCORPORATED, Chandler, AZ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01L 21/311 (2006.01); H01L 21/52 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01); H01L 23/48 (2006.01); H01L 23/522 (2006.01); H01L 25/065 (2006.01);
U.S. Cl.
CPC ...
H01L 28/60 (2013.01); H01L 21/31105 (2013.01); H01L 21/52 (2013.01); H01L 23/3142 (2013.01); H01L 23/48 (2013.01); H01L 23/5222 (2013.01); H01L 23/5223 (2013.01); H01L 24/10 (2013.01); H01L 24/14 (2013.01); H01L 24/42 (2013.01); H01L 24/85 (2013.01); H01L 25/0652 (2013.01); H01L 28/00 (2013.01); H01L 28/40 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/48 (2013.01); H01L 24/81 (2013.01); H01L 24/83 (2013.01); H01L 2224/0391 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04026 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13022 (2013.01); H01L 2224/1412 (2013.01); H01L 2224/14104 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/293 (2013.01); H01L 2224/2929 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/48101 (2013.01); H01L 2224/48105 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/49175 (2013.01); H01L 2224/73257 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/8192 (2013.01); H01L 2224/81815 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/1205 (2013.01);
Abstract
The teachings of the present disclosure may be applied to the manufacture and design of capacitors. In some embodiments of these teachings, a capacitor may be formed on a heavily doped substrate. For example, a method for manufacturing a capacitor may include: depositing an oxide layer on a first side of a heavily doped substrate; depositing a first metal layer on the oxide layer; and depositing a second metal layer on a second side of the heavily doped substrate.