The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 26, 2019

Filed:

Aug. 31, 2018
Applicant:

Tela Innovations, Inc., Los Gatos, CA (US);

Inventors:

Scott T. Becker, Scotts Valley, CA (US);

Michael C. Smayling, Fremont, CA (US);

Assignee:

Tela Innovations, Inc., Los Gatos, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 29/76 (2006.01); H01L 27/118 (2006.01); H01L 27/092 (2006.01); H01L 21/28 (2006.01); H01L 29/423 (2006.01); H01L 21/8238 (2006.01); H01L 27/088 (2006.01); H01L 27/02 (2006.01); H01L 23/528 (2006.01); H01L 23/522 (2006.01); G06F 17/50 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11807 (2013.01); G06F 17/5068 (2013.01); G06F 17/5072 (2013.01); H01L 21/28123 (2013.01); H01L 21/823871 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 27/0207 (2013.01); H01L 27/088 (2013.01); H01L 27/092 (2013.01); H01L 29/42372 (2013.01); H01L 29/42376 (2013.01); H01L 2027/11812 (2013.01); H01L 2027/11814 (2013.01); H01L 2027/11855 (2013.01); H01L 2027/11861 (2013.01); H01L 2027/11862 (2013.01); H01L 2027/11864 (2013.01); H01L 2027/11866 (2013.01); H01L 2027/11875 (2013.01); H01L 2027/11887 (2013.01); H01L 2027/11888 (2013.01); H01L 2924/0002 (2013.01);
Abstract

An integrated circuit includes a first gate electrode track and a second gate electrode track. The first gate electrode track includes a first gate electrode feature that forms an n-channel transistor as it crosses an n-diffusion region. The first gate electrode track does not cross a p-diffusion region. The second gate electrode track includes a second gate electrode feature that forms a p-channel transistor as it crosses a p-diffusion region. The second gate electrode track does not cross an n-diffusion region. The integrated circuit also includes a linear shaped conductor that crosses both the first and second gate electrode features in a reference direction perpendicular to the first and second gate electrode tracks. The linear shaped conductor provides electrical connection between the first and second gate electrode features.


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