The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2019
Filed:
Aug. 04, 2017
Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;
Eiji Tsukuda, Tokyo, JP;
Kenichiro Sonoda, Tokyo, JP;
Renesas Electronics Corporation, Tokyo, JP;
Abstract
To provide a semiconductor device having improved reliability by preventing, in a split-gate MONOS memory comprised of a fin type transistor, unbalanced injection distribution of electrons into a charge accumulation film due to the shape of the fin. A memory gate electrode configuring a memory cell is formed over a fin. The impurity concentration of a portion of this memory gate electrode contiguous to an ONO film that covers the upper surface of the fin is made lower than that of a portion of the memory gate electrode contiguous to an ONO film that covers the side surface of the fin.