The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2019
Filed:
Apr. 26, 2017
Applicant:
Dongbu Hitek Co., Ltd., Seoul, KR;
Inventor:
Joo Hyung Kim, Seoul, KR;
Assignee:
DB Hitek Co., Ltd, Seoul, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/082 (2006.01); H01L 29/735 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/082 (2013.01); H01L 29/0649 (2013.01); H01L 29/0692 (2013.01); H01L 29/0813 (2013.01); H01L 29/0821 (2013.01); H01L 29/1008 (2013.01); H01L 29/6625 (2013.01); H01L 29/735 (2013.01);
Abstract
A bipolar junction transistor having a relatively reduced size and an improved current gain and a method of manufacturing the same are disclosed. The bipolar junction transistor includes a plurality of emitter regions disposed in a substrate, a plurality of base regions disposed in the substrate and configured to surround the emitter regions, respectively, and a collector region disposed in the substrate and configured to surround the base regions. The plurality of emitter and base regions may be arranged in a matrix.