The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 26, 2019

Filed:

Jul. 11, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;

Inventors:

Jung-Ho Do, Yongin-si, KR;

Jonghoon Jung, Seongnam-si, KR;

Sanghoon Baek, Seoul, KR;

Seungyoung Lee, Seoul, KR;

Taejoong Song, Seongnam-si, KR;

Jinyoung Lim, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32139 (2013.01); H01L 21/823821 (2013.01); H01L 21/823878 (2013.01); H01L 21/823807 (2013.01);
Abstract

A method of manufacturing a semiconductor device may include forming active patterns, forming a polygonal mask pattern having a first width and a second width on the active patterns, forming an active region by executing a first etching process using the mask pattern, forming a first cutting mask for removing a first corner rounding in which a width of the active region is the first width, removing the first corner rounding by executing a second etching process using the first cutting mask, forming a second cutting mask for removing a second corner rounding in which the width of the active region is changed from the first width to the second width, and executing a third etching process using the second cutting mask.


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