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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10217635 B1

PDFFull Text
Date of Patent:
Feb. 26, 2019

Filed:

Jan. 20, 2017

Method of manufacturing semiconductor device

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Yong Seung Moon, Yongin-si, KR;

Byung Gook Kim, Seoul, KR;

Jae Hyuck Choi, Seoul, KR;

Sung Won Kwon, Suwon-si, KR;

Assignee:

Samsung Electronics Co., Ltd., , KR;

Attorney:

Myers Bigel, P.A.

Primary Examiner:

Anita K Alanko

Int. Cl.
CPC ...
H01L 21/033 (2006.01); H01L 21/311 (2006.01); H01L 21/027 (2006.01); G03F 1/80 (2012.01); B23K 26/12 (2014.01); B23K 26/362 (2014.01); B29C 59/14 (2006.01); H01L 21/304 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); B29C 59/16 (2006.01); G03F 7/004 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0338 (2013.01); G03F 1/80 (2013.01); H01L 21/0274 (2013.01); H01L 21/0332 (2013.01); H01L 21/0335 (2013.01); H01L 21/0337 (2013.01); H01L 21/31138 (2013.01); B23K 26/126 (2013.01); B23K 26/362 (2013.01); B29C 59/14 (2013.01); B29C 59/16 (2013.01); B29C 2791/009 (2013.01); G03F 7/0041 (2013.01); H01L 21/02675 (2013.01); H01L 21/304 (2013.01); H01L 21/30621 (2013.01);
Abstract

Provided is a method of manufacturing a semiconductor device. The method of manufacturing a semiconductor device includes forming a target etching layer on a substrate, patterning the target etching layer to form a pattern layer including a pattern portion having a first height and a first width and a recess portion having a second width, providing a first gas and a second gas on the pattern layer, and performing a reaction process including reacting the first and second gases with a surface of the pattern portion by irradiating a laser beam on the pattern layer. The performing the reaction process includes removing a portion of sidewalls of the pattern portion so that the pattern portion has a third width that is smaller than the first width.

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