The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 26, 2019

Filed:

Jun. 09, 2016
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Cheng-Wei Cheng, White Plains, NY (US);

Sanghoon Lee, White Plains, NY (US);

Kuen-Ting Shiu, Yorktown Heights, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02491 (2013.01); H01L 21/02381 (2013.01); H01L 21/02543 (2013.01); H01L 21/02546 (2013.01); H01L 29/20 (2013.01); H01L 29/66522 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7849 (2013.01);
Abstract

A method of forming a semiconductor device is provided. The method includes depositing an aluminum-base interlayer on a silicon substrate, the aluminum-base interlayer having a thickness of less than about 100 nanometers; and growing a III-V compound material on the aluminum-base interlayer. The aluminum-base interlayer deposited directly on silicon allows for continuous and planar growth of III-V compound materials on the interlayer, which facilitates the manufacture of high quality electronic devices.


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