The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2019
Filed:
Dec. 23, 2014
Applicants:
Stc.unm, Albuquerque, NM (US);
Case Western Reserve University, Cleveland, OH (US);
Inventors:
James Plusquellic, Albuquerque, NM (US);
Swarup Bhunia, Beachwood, OH (US);
Assignee:
STC.UNM, Albuquerque, NM (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 21/75 (2013.01); G11C 23/00 (2006.01); G06F 7/58 (2006.01); H04L 9/08 (2006.01); G09C 1/00 (2006.01); G06F 21/60 (2013.01); G11C 13/00 (2006.01); G11C 16/10 (2006.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
G06F 21/75 (2013.01); G06F 7/588 (2013.01); G06F 21/604 (2013.01); G09C 1/00 (2013.01); G11C 13/004 (2013.01); G11C 13/0069 (2013.01); G11C 16/10 (2013.01); G11C 16/26 (2013.01); G11C 23/00 (2013.01); H04L 9/0866 (2013.01); H04L 2209/12 (2013.01);
Abstract
This disclosure describes techniques for generating physically unclonable functions (PUF) from non-volatile memory cells. The PUFs leverage resistance variations in non-volatile memory cells. Resistance variations in array of non-volatile memory cells may be produce a bitstring during an enrollment process. The bitstring may be stored in the non-volatile memory array. Regeneration may include retrieving the bitstring from the non-volatile memory array.