The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2019
Filed:
Oct. 18, 2016
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Jung-Soo Kim, Yongin-si, KR;
Bong-Kil Jung, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;
Abstract
A nonvolatile memory device includes a memory cell array, a voltage generator, and a control circuit. The voltage generator generates word-line voltages to be applied to the memory cell array. The control circuit generates control signals that control the voltage generator in response to a command and an address. The control circuit includes a hacking detection circuit. The hacking detection circuit disables an operation of the nonvolatile memory device when a hacking is detected, wherein the hacking is detected when an access sequence of the command and the address does not match a standard sequence of the nonvolatile memory device a consecutive number of times.