The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 26, 2019

Filed:

Jun. 10, 2014
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Eric Thierry Peeters, Frisco, TX (US);

William Francis Kraus, Plano, TX (US);

Manuel Gilberto Aguilar, Plano, TX (US);

John Anthony Rodriguez, Dallas, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 12/02 (2006.01); G06F 7/58 (2006.01); G11C 7/20 (2006.01); G11C 29/04 (2006.01); G11C 11/22 (2006.01); G11C 29/44 (2006.01);
U.S. Cl.
CPC ...
G06F 7/588 (2013.01); G11C 7/20 (2013.01); G11C 11/225 (2013.01); G11C 29/04 (2013.01); G11C 2029/4402 (2013.01);
Abstract

A system on chip (SoC) may include a nonvolatile ferroelectric random access memory (FRAM). A random number may be created by applying operating power to the ferroelectric random access memory (FRAM) device and reading a sequence of virgin memory locations within the FRAM device to produce the random number sequence. The sequence of virgin memory locations had previously never been written. The random number may be produced during an initial boot of the SoC, for example. Alternatively, the random number may be saved by a test station during testing of the FRAM device after fabrication of the FRAM device. A memory test of the FRAM may then be performed, after which the random number may be stored in a defined location in the FRAM.


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