The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2019
Filed:
Mar. 21, 2018
Rockley Photonics Limited, London, GB;
Guomin Yu, Glendora, CA (US);
Aaron John Zilkie, Pasadena, CA (US);
Hooman Abediasl, Pasadena, CA (US);
Damiana Lerose, Pasadena, CA (US);
Amit Singh Nagra, Altadena, CA (US);
Pradeep Srinivasan, Fremont, CA (US);
Haydn Frederick Jones, Reading, GB;
Rockley Photonics Limited, London, GB;
Abstract
An optoelectronic device and method of making the same. In some embodiments, the optoelectronic device includes a substrate, a Mach-Zehnder waveguide modulator, and an epitaxial crystalline cladding layer. The Mach-Zehnder waveguide modulator includes a left arm including a left SiGe optical waveguide, and a right arm including a right SiGe optical waveguide, each of the left and right optical waveguides including a junction region and a plurality of electrodes for providing a bias across the junction to enable control of the phase of light travelling through the junction regions via dispersion. The epitaxial crystalline cladding layer is on top of the substrate and beneath the junction region of the left optical waveguide and/or the junction region of the right optical waveguide, and has a refractive index which is less than a refractive index of the respective junction region(s), such that optical power is confined to the respective junction region(s).