The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2019
Filed:
Apr. 13, 2018
Infineon Technologies Ag, Neubiberg, DE;
Markus Zannoth, Neubiberg, DE;
Jaafar Mejri, Ottobrunn, DE;
INFINEON TECHNOLOGIES AG, Neubiberg, DE;
Abstract
A method of monitoring a gate of a transistor includes monitoring a gate voltage of the transistor; measuring a first time difference between when a gate control signal is asserted and when the gate voltage of the transistor crosses a first voltage threshold based on the monitoring; measuring a second time difference between when the gate voltage of the transistor crosses the first voltage threshold and when the gate voltage of the transistor crosses a second voltage threshold based on the monitoring; and determining whether the first time difference falls within a first time window, and whether the second time difference falls within a second time window.