The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 26, 2019

Filed:

Mar. 30, 2015
Applicant:

Ngk Insulators, Ltd., Nagoya, JP;

Inventors:

Takayuki Sekiya, Nisshin, JP;

Mika Murakami, Nagoya, JP;

Naoya Saito, Nagoya, JP;

Assignee:

NGK Insulators, Ltd., Nagoya, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 27/407 (2006.01);
U.S. Cl.
CPC ...
G01N 27/4072 (2013.01);
Abstract

In a sensor element, a fourth diffusion rate-controlling portion includes a diffusion rate-controlling portion. The diffusion rate-controlling portion is formed between one or more and three or less surfaces, e.g., an upper surface, of upper, lower, left and right inner peripheral surfaces of a measurement-object gas flowing portion and a partition wall. A measurement electrode is formed on one, e.g., a lower surface, of upper, lower, left and right inner peripheral surfaces of a third inner cavity, the one surface being different in orientation from the Csurface along which the diffusion rate-controlling portion is formed. The diffusion rate-controlling portion and the measurement electrode may be formed on surfaces opposite to each other. A distance L between the measurement electrode and the diffusion rate-controlling portion may be 0.1 mm or more.


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