The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 26, 2019

Filed:

Sep. 11, 2015
Applicant:

Nitto Denko Corporation, Osaka, JP;

Inventors:

Ekambaram Sambandan, Carlsbad, CA (US);

Bin Zhang, San Diego, CA (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B01J 35/00 (2006.01); B01J 37/08 (2006.01); B01J 37/16 (2006.01); B01J 21/06 (2006.01); B01J 23/72 (2006.01); B01J 23/75 (2006.01); A61L 9/18 (2006.01); B01D 53/00 (2006.01); B01J 23/02 (2006.01); B01J 23/68 (2006.01); B01J 27/18 (2006.01); B01J 37/04 (2006.01); C02F 1/32 (2006.01); C02F 1/72 (2006.01); C02F 101/32 (2006.01);
U.S. Cl.
CPC ...
B01J 35/004 (2013.01); A61L 9/18 (2013.01); B01D 53/007 (2013.01); B01J 21/063 (2013.01); B01J 23/02 (2013.01); B01J 23/682 (2013.01); B01J 23/687 (2013.01); B01J 23/72 (2013.01); B01J 23/75 (2013.01); B01J 27/1817 (2013.01); B01J 35/002 (2013.01); B01J 37/04 (2013.01); B01J 37/086 (2013.01); B01J 37/16 (2013.01); C02F 1/32 (2013.01); C02F 1/725 (2013.01); B01D 2255/802 (2013.01); C02F 2101/322 (2013.01); C02F 2305/10 (2013.01);
Abstract

Described herein are heterogeneous materials comprising a p-type semiconductor comprising two metal oxide compounds of the same metal in two different oxidation states and an n-type semiconductor having a deeper valence band than the p-type semiconductor valence bands, wherein the semiconductor types are in ionic communication with each other. The heterogeneous materials enhance photocatalytic activity.


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