The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2019
Filed:
Jul. 13, 2016
Nuvoton Technology Corporation, Hsinchu, TW;
Jan-Harm Nieland, Santa Clara, CA (US);
NUVOTON TECHNOLOGY CORPORATION, Hsinchu, TW;
Abstract
A high-voltage circuit has a protection circuit protecting a low-voltage MOSFET. A first MOSFET, a low-voltage device with a gate coupled to an input voltage, is coupled in a series with a second MOSFET which is a high-voltage device, both of a first conductivity type. A protection circuit includes a third, a fourth, and a fifth MOSFET. The third MOSFET has a second conductivity type and source and body coupled to the input voltage. The fourth MOSFET has the first conductivity type and a drain coupled to a drain of the third MOSFET, a gate coupled to a second bias voltage, and a source and a body coupled to the first power terminal. The fifth MOSFET has the first conductivity type and a drain coupled to the input voltage, a gate coupled to the drain of the fourth MOSFET, and a source coupled to the first power terminal.