The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 19, 2019

Filed:

Apr. 29, 2016
Applicant:

Imec Vzw, Leuven, BE;

Inventors:

Xavier Rottenberg, Kessel-Lo, BE;

Christoph Adelmann, Wilsele, BE;

Assignee:

IMEC vzw, Leuven, BE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01B 7/14 (2006.01); H03H 9/22 (2006.01); H01L 41/00 (2013.01); H01L 41/12 (2006.01); G01B 7/24 (2006.01); G01R 33/12 (2006.01); H03H 9/17 (2006.01); H03H 9/24 (2006.01); G01R 33/18 (2006.01); H03B 15/00 (2006.01); H01F 10/12 (2006.01); H01F 10/14 (2006.01); B82Y 25/00 (2011.01);
U.S. Cl.
CPC ...
H03H 9/22 (2013.01); G01B 7/24 (2013.01); G01R 33/1284 (2013.01); G01R 33/18 (2013.01); H01F 10/126 (2013.01); H01F 10/14 (2013.01); H01L 41/00 (2013.01); H01L 41/12 (2013.01); H03B 15/006 (2013.01); H03H 9/171 (2013.01); H03H 9/24 (2013.01); B82Y 25/00 (2013.01);
Abstract

The disclosed technology generally relates to semiconductor devices, and more particularly to a device configured as one or both of a spin wave generator or a spin wave detector. In one aspect, the device includes a magnetostrictive film and a deformation film physically connected to the magnetorestrictive film. The device also includes an acoustic isolation surrounding the magnetostrictive film and the deformation film to form an acoustic resonator. When the device is configured as the spin wave generator, the deformation film is configured to undergo a change physical dimensions in response to an actuation, where the change in the physical dimensions of the deformation film induces a mechanical stress in the magnetostrictive film to cause a change in the magnetization of the magnetostrictive film. When the device is configured as the spin wave detector, the magnetostrictive film is configured to undergo to a change in physical dimensions in response to a change in magnetization, wherein the change in the physical dimensions of the magnetostrictive film induces a mechanical stress in the deformation film to cause generation of electrical power by the deformation film.


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