The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 19, 2019

Filed:

Jan. 09, 2018
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventor:

Nobuya Nishida, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02M 7/483 (2007.01); H02J 3/38 (2006.01); G05F 1/67 (2006.01); F03D 7/02 (2006.01); H02M 7/487 (2007.01); H02M 7/493 (2007.01); H01L 31/02 (2006.01); H02M 7/00 (2006.01);
U.S. Cl.
CPC ...
H02J 3/385 (2013.01); F03D 7/0284 (2013.01); G05F 1/67 (2013.01); H01L 31/02021 (2013.01); H02J 3/386 (2013.01); H02M 7/487 (2013.01); H02M 7/493 (2013.01); H02M 7/003 (2013.01);
Abstract

An electric-power converting device having an inverter circuit of a 4-parallel configuration is realized by a combination of four first to third power semiconductor module devices. In each of module device groups, a single unit of the first power semiconductor module device and a single unit of the second power semiconductor module device are mixedly disposed so as to be alternately disposed. Furthermore, the first to third power semiconductor module devices have circuit element groups which have a common point that each circuit element group includes at least one of first and second transistors and first and second diodes.


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