The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2019
Filed:
Jan. 23, 2015
Unist (Ulsan National Institute of Science and Technology), Ulsan, KR;
Abstract
The purpose of the present invention is to provide a terahertz detector using a field-effect transistor capable of implementing high sensitivity by exhibiting an asymmetric characteristic only with a form of a source/drain and a gate. To this end, the present invention relates to the terahertz detector using a field-effect transistor comprising: a source formed by being doped on a portion of a silicon base; a channel formed so as to encompass the source on a plane; a drain formed outside the channel; a dielectric layer formed on an upper end of the source, the channel and the drain; and a gate located at an upper end of the dielectric layer, wherein when terahertz electromagnetic waves are applied through the gate, the intensity of the electromagnetic waves is detected using a current/voltage outputted from the source and the drain.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile