The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2019
Filed:
Mar. 29, 2018
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Jin Hwan Kim, Seoul, KR;
Sung Joon Kim, Yongin-si, KR;
Su Hyun Jo, Hwaseong-si, KR;
Seung Hwan Lee, Suwon-si, KR;
Tae Sung Jang, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonngi-Do, KR;
Abstract
A semiconductor light emitting device includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, sequentially stacked on a substrate along a first direction, and including an exposed region exposing the first conductivity-type semiconductor layer. A first contact electrode is in the exposed region, a second contact electrode is on the second conductivity-type semiconductor layer, and an insulating layer covers the light emitting structure. Separate electrode pads penetrate the insulating layer to be electrically connected to the first contact electrode and the second contact electrode. A side surface of at least one of the first and second electrode pads may extend to be coplanar with a side surface of the substrate along the first direction.