The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2019
Filed:
May. 27, 2017
Xiamen Sanan Optoelectronics Technology Co., Ltd., Xiamen, CN;
Chia-hung Chang, Xiamen, CN;
Gong Chen, Xiamen, CN;
Su-hui Lin, Xiamen, CN;
Kang-wei Peng, Xiamen, CN;
Sheng-hsien Hsu, Xiamen, CN;
Chuan-gui Liu, Xiamen, CN;
Xiao-xiong Lin, Xiamen, CN;
Yu Zhou, Xiamen, CN;
Jing-jing Wei, Xiamen, CN;
Jing Huang, Xiamen, CN;
XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD., Xiamen, CN;
Abstract
An LED fabrication method includes forming release holes by focusing a laser at the substrate back surface, and forming stealth laser-blast areas by focusing a laser inside the substrate on positions corresponding to the release holes; communicating the release holes with the stealth laser-blast areas to release impurities generated during forming of the stealth laser-blast areas from the substrate through the release holes, thereby avoiding low external quantum efficiency resulting from adherence of the released material to the side wall of the stealth laser-blast areas. By focusing on a position with 10 μm˜40 μm inward from the substrate back side, adjusting laser energy and frequency to burn holes inside the substrate to penetrate and expose the substrate back surface, thereby effectively removing by-products, and reducing light absorption by such by-products, light extraction from a side wall of the LED can also be improved and light extraction efficiency is enhanced.