The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2019
Filed:
Oct. 30, 2017
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventors:
Shinichi Watanuki, Ibaraki, JP;
Futoshi Komatsu, Ibaraki, JP;
Tomoo Nakayama, Ibaraki, JP;
Takashi Ogura, Ibaraki, JP;
Teruhiro Kuwajima, Ibaraki, JP;
Assignee:
Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/028 (2006.01); H01L 31/02 (2006.01); H01L 31/0232 (2014.01);
U.S. Cl.
CPC ...
H01L 31/028 (2013.01); H01L 31/02005 (2013.01); H01L 31/02327 (2013.01);
Abstract
Germanium (Ge) contamination to a semiconductor manufacturing apparatus is suppressed. Germanium is a dissimilar material in a silicon semiconductor process. A semiconductor device is provided with a Ge photodiode including an n-type germanium layer, and a plug capacitively coupled to the n-type germanium layer. In other words, the n-type germanium layer of the Ge photodiode and the plug are not in direct contact with each other but are capacitively coupled to each other.