The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2019
Filed:
May. 01, 2017
Applicant:
V Technology Co., Ltd., Yokohama-shi, JP;
Inventors:
Assignee:
V TECHNOLOGY CO., LTD., Yohohama-shi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/20 (2006.01); H01L 21/67 (2006.01); H01L 27/12 (2006.01); H01L 29/04 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78678 (2013.01); H01L 21/02675 (2013.01); H01L 21/20 (2013.01); H01L 21/67115 (2013.01); H01L 27/1281 (2013.01); H01L 29/04 (2013.01); H01L 29/66765 (2013.01); H01L 29/78618 (2013.01); H01L 29/78621 (2013.01);
Abstract
The present invention provides a thin film transistor including a gate electrode, a source electrode, a drain electrode, and a semiconductor layer, which are laminated on a substrate. The semiconductor layer is a polysilicon thin film. The polysilicon thin film in regions corresponding to the source electrode and the drain electrode has a smaller crystal grain size than that of the polysilicon thin film in a channel region between the source electrode and the drain electrode.