The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2019
Filed:
Oct. 22, 2014
Hitachi Automotive Systems, Ltd., Hitachinaka-shi, Ibaraki, JP;
Shinichirou Wada, Tokyo, JP;
Hitachi Automotive Systems, Ltd., Hitachinaka-shi, JP;
Abstract
To provide a high-withstand-voltage lateral semiconductor device in which ON-resistance or drain current density is uniform at an end portion and a center portion of the device in a gate width direction. A lateral N-type MOS transistorformed on an SOI substrate includes a trench isolation structurefilled with an insulating film at an end portion of the transistor. An anode regionof a diodeis provided adjacent to a P-type body regionof the transistor through the trench isolation structureand a cathode regionof the diodeis also provided adjacent to an N-type drain-drift regionof the transistor through the trench isolation structureso as to cause electric field to be applied to the trench isolation structureto be zero when a voltage is applied across the transistor.