The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2019
Filed:
Feb. 27, 2018
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Tatsuo Shimizu, Shinagawa, JP;
Toshiya Yonehara, Kawasaki, JP;
Hiroshi Ono, Sategaya, JP;
Daimotsu Kato, Kawasaki, JP;
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Abstract
A semiconductor device according to an embodiment includes: a wide bandgap semiconductor layer; a gate electrode; and a gate insulating layer disposed between the wide bandgap semiconductor layer and the gate electrode, including a first silicon oxide film, a second silicon oxide film between the first silicon oxide film and the gate electrode, and a first aluminum oxynitride film between the first silicon oxide film and the second silicon oxide film, and having a first atomic ratio of nitrogen relative to a sum of oxygen and nitrogen at a first position in the first aluminum oxynitride film which is lower than a second atomic ratio of nitrogen relative to a sum of oxygen and nitrogen at a second position, closer to the second silicon oxide film than the first position, in the first aluminum oxynitride film.