The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 19, 2019

Filed:

Sep. 08, 2015
Applicant:

Macom Technology Solutions Holdings, Inc., Lowell, MA (US);

Inventors:

John Claassen Roberts, Hillsborough, NC (US);

James W. Cook, Jr., Raleigh, NC (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/58 (2006.01); H01L 29/20 (2006.01); H01L 21/265 (2006.01); H01L 21/266 (2006.01); H01L 29/32 (2006.01); H01L 29/778 (2006.01); H01L 29/417 (2006.01); H01L 29/06 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); H01L 21/266 (2013.01); H01L 21/26506 (2013.01); H01L 29/32 (2013.01); H01L 29/7783 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02483 (2013.01); H01L 21/02488 (2013.01); H01L 21/02538 (2013.01); H01L 29/0623 (2013.01); H01L 29/41758 (2013.01);
Abstract

III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.


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