The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 19, 2019

Filed:

Mar. 10, 2016
Applicant:

Nxp B.v., Eindhoven, NL;

Inventor:

Da-Wei Lai, Nijmegen, NL;

Assignee:

NXP B.V., Eindhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 27/10 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1079 (2013.01); H01L 27/027 (2013.01); H01L 29/0804 (2013.01); H01L 29/0821 (2013.01); H01L 29/0847 (2013.01); H01L 29/1004 (2013.01);
Abstract

A bipolar junction transistor is configured to provide electrostatic discharge (ESD) protection for an integrated circuit. The bipolar junction transistor includes a substrate configured to function as a gate for the bipolar junction transistor. At least one drain finger extends in a first direction on a first surface of the substrate and is configured to function as a collector for the bipolar junction transistor. At least one source finger extends in the first direction on the first surface of the substrate and is configured to function as an emitter for the bipolar junction transistor. The at least one source finger includes a pickup region that is configured to set a substrate potential.


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