The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2019
Filed:
Oct. 12, 2015
Applicants:
Imec Vzw, Leuven, BE;
Katholieke Universiteit Leuven, Ku Leuven R&d, Leuven, BE;
Inventors:
Devin Verreck, Pellenberg, BE;
Anne S. Verhulst, Houtvenne, BE;
Assignees:
IMEC VZW, Leuven, BE;
Katholieke Universiteit Leuven, KU LEUVEN R&D, Leuven, BE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/423 (2006.01); H01L 27/092 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/36 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0688 (2013.01); H01L 27/092 (2013.01); H01L 29/0847 (2013.01); H01L 29/0895 (2013.01); H01L 29/365 (2013.01); H01L 29/42356 (2013.01); H01L 29/66977 (2013.01); H01L 29/7391 (2013.01); H01L 29/78 (2013.01); H01L 29/0665 (2013.01);
Abstract
A p-type Tunnel Field-Effect Transistor comprises a drain p-type semiconductor region, a source n-type semiconductor region, and at least one gate stack. The source n-type semiconductor region comprises a lowly doped section with a length of at least 10 nm and with a doping level of n-type dopant elements below 5×10at/cmand, in contact with the lowly doped section, a highly doped section with a length between 1 monolayer and 20 nm and with a doping level of n-type dopant elements above 5×10at/cm.