The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 19, 2019

Filed:

Nov. 27, 2013
Applicant:

Sumitomo Electric Industries, Ltd., Osaka-shi, JP;

Inventors:

Takeyoshi Masuda, Osaka, JP;

Keiji Wada, Osaka, JP;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/739 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 21/765 (2006.01); H01L 29/872 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0623 (2013.01); H01L 21/765 (2013.01); H01L 29/0634 (2013.01); H01L 29/0661 (2013.01); H01L 29/1608 (2013.01); H01L 29/66068 (2013.01); H01L 29/7397 (2013.01); H01L 29/78 (2013.01); H01L 29/7802 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01); H01L 29/872 (2013.01);
Abstract

A silicon carbide film has first and second main surfaces. The second main surface has an element formation surface and a termination surface. The silicon carbide film has a first range that constitutes a first main surface and an intermediate surface opposite to the first main surface, and a second range that is provided on the intermediate surface and constitutes the element formation surface. The first range includes: a first breakdown voltage holding layer, and a guard ring region partially provided at the intermediate surface in the termination portion. The second range has a second breakdown voltage holding layer. The second range has one of a structure only having the second breakdown voltage holding layer in the termination portion and a structure disposed only in the element portion of the element portion and the termination portion.


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