The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2019
Filed:
Mar. 01, 2018
Toshiba Memory Corporation, Tokyo, JP;
Takaya Yamanaka, Yokkaichi Mie, JP;
Toshiba Memory Corporation, Tokyo, JP;
Abstract
A memory device includes a conductive layer, a first electrode over the conductive layer, and a second electrode between the conductive layer and the first electrode. The second electrode is a material different from that of the first electrode. A semiconductor pillar extends through the first and second electrodes, and has an end connected to the conductive layer. A first insulating film is between the semiconductor pillar and the first and second electrodes and between at least a portion of the semiconductor pillar and the conductive layer. A second insulating film is between the conductive layer and the first insulating film. A third insulating film is between the first insulating film and the second electrode, and between the second and third insulating film. The second electrode and conductive layer include a first element and the second and third insulating films comprise an oxide or nitride of the first element.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile