The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2019
Filed:
Nov. 22, 2015
Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;
Tatsuyoshi Mihara, Tokyo, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Abstract
The reliability and performances of a semiconductor device having a nonvolatile memory are improved. A selection gate electrode is formed over a semiconductor substrate via a first insulation film. Over the opposite side surfaces of the selection gate electrode, second insulation films of sidewall insulation films are formed. Over the semiconductor substrate, a memory gate electrode is formed via a third insulation film having a charge accumulation part. The selection gate electrode and the memory gate electrode are adjacent to each other via the second insulation film and the third insulation film. The second insulation film is not formed under the memory gate electrode. The total thickness of the second insulation film and the third insulation film interposed between the selection gate electrode and the memory gate electrode is larger than the thickness of the third insulation film interposed between the semiconductor substrate and the memory gate electrode.